driver & gain block amplifiers - smt 8 8 - 10 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc311lp3 / 311LP3E ingap hbt gain block mmic amplifier, dc - 6 ghz v03.0907 general description features functional diagram the hmc311lp3 & hmc311LP3E are gaas ingap heterojunction bipolar transistor (hbt) gain block mmic smt dc to 6 ghz ampli ers. this 3x3mm qfn packaged ampli er can be used as either a cascadable 50 ohm gain stage or to drive the lo of hmc mixers with up to +17 dbm output power. the hmc311lp3(e) offers 14.5 db of gain and an output ip3 of +32 dbm while requiring only 56 ma from a +5v supply. the darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. p1db output power: +15.5 dbm output ip3: +32 dbm gain: 14.5 db 50 ohm i/os 16 lead 3x3mm smt package: 9mm 2 typical applications the hmc311lp3 / hmc311LP3E is an ideal rf/if gain block or lo buffer ampli er for: ? cellular / pcs / 3g ? fixed wireless & wlan ? catv & cable modem ? microwave radio electrical speci cations, vs= 5.0 v, rbias= 22 ohm, t a = +25 c parameter min. typ. max. units gain dc - 1.0 ghz 1.0 - 4.0 ghz 4.0 - 6.0 ghz 13.0 12.5 12.0 14.5 14.3 14.0 db db db gain variation over temperature dc - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 0.005 0.008 0.012 0.008 0.012 0.016 db/ c db/ c db/ c return loss input / output dc - 1.0 ghz 1.0 - 3.0 ghz 3.0 - 6.0 ghz 13 11 15 db db db reverse isolation dc - 6.0 ghz 18 db output power for 1 db compression (p1db) dc - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 13.5 12.0 10.0 15.5 15.0 13.0 dbm dbm dbm output third order intercept (ip3) dc - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 32 30 28 24 dbm dbm dbm dbm noise figure dc - 6.0 ghz 4.5 db supply current (icq) 56 74 ma note: data taken with broadband bias tee on device output.
driver & gain block amplifiers - smt 8 8 - 11 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output return loss vs. temperature gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 0123456789 s21 s11 s22 response (db) frequency (ghz) 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 012345678 +25 c +85 c -40 c gain (db) frequency (ghz) -20 -15 -10 -5 0 012345678 +25 c +85 c -40 c return loss (db) frequency (ghz) -20 -15 -10 -5 0 012345678 +25 c +85 c -40 c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 012345678 +25 c +85 c -40 c reverse isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 12345678 +25c +85c -40c noise figure (db) frequency (ghz) hmc311lp3 / 311LP3E ingap hbt gain block mmic amplifier, dc - 6 ghz v03.0907
driver & gain block amplifiers - smt 8 8 - 12 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power compression @ 6 ghz p1db vs. temperature psat vs. temperature output ip3 vs. temperature power compression @ 1 ghz gain, power, output ip3 & supply current vs. supply voltage @ 1 ghz 0 2 4 6 8 10 12 14 16 18 20 012345678 +25 c +85 c -40 c p1db (dbm) frequency (ghz) -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 2 4 6 8 10 12 14 16 18 20 012345678 +25 c +85 c -40 c psat (dbm) frequency (ghz) 0 5 10 15 20 25 30 35 40 0 20 40 60 80 4.5 4.75 5 5.25 5.5 gain (db), p1db (dbm), psat (dbm), ip3 (dbm) icq (ma) vs(v) 10 12 14 16 18 20 22 24 26 28 30 32 34 012345678 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) hmc311lp3 / 311LP3E ingap hbt gain block mmic amplifier, dc - 6 ghz v03.0907
driver & gain block amplifiers - smt 8 8 - 13 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings collector bias voltage (vcc) +7 vdc rf input power (rfin)(vs = +5 vdc) +10 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 5.21 mw/c above 85 c) 0.339 w thermal resistance (junction to ground paddle) 192 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. lead spacing tolerance is non-cumulative 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hittite application note for suggested land pattern. hmc311lp3 / 311LP3E ingap hbt gain block mmic amplifier, dc - 6 ghz v03.0907 part number package body material lead finish msl rating package marking [3] hmc311lp3 low stress injection molded plastic sn/pb solder msl1 [1] 311 xxxx hmc311LP3E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 311 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information electrostatic sensitive device observe handling precautions
driver & gain block amplifiers - smt 8 8 - 14 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application circuit pin descriptions pin number function description interface schematic 1, 2, 4 - 9, 11 - 16 n/c this pin may be connected to rf ground. 3rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 10 rfout rf output and dc bias for the output stage. gnd package bottom must be connected to rf/dc ground. recommended component values component frequency (mhz) 50 900 1900 2200 2400 3500 5200 5800 l1 270 nh 56 nh 18 nh 18 nh 15 nh 8.2 nh 3.3 nh 3.3 nh c1, c2 0.01 f 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf note: 1. select rbias to achieve icq using equation below, rbias > 22 ohm. 2. external blocking capacitors are required on rfin and rfout. icq = vs - 3.9 rbias hmc311lp3 / 311LP3E ingap hbt gain block mmic amplifier, dc - 6 ghz v03.0907
driver & gain block amplifiers - smt 8 8 - 15 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 106789 [1] item description j1 - j2 pc mount sma connector j3 2 mm dc header c1, c2 capacitor, 0402 pkg. c3 10,000 pf capacitor, 0805 pkg. r1 22 ohm resistor, 0805 pkg. l1 inductor, 0805 pkg. u1 hmc311lp3 / hmc311LP3E pcb [2] 106493 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 pin number description 1, 2, 3 vs 4, 5, 6 gnd j3 hmc311lp3 / 311LP3E ingap hbt gain block mmic amplifier, dc - 6 ghz v03.0907
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